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  Datasheet File OCR Text:
 S9012LT1
PNP General Purpose Transistors
P b Lead(Pb)-Free
1 2 3
SOT-23
V CEO Value -25 -40 -5 -500
300 2.4 417
S9012LT1=2T1
-0.1 -100 -100
-25 -40 -5.0
)
E=-20Vdc, I E= 0 -40 -5.0
O
-0.1 -0.1 -0.1
u
u u
WEITRON
http://www.weitron.com.tw
S9012LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC=-50 mAdc, VCE=-1.0 Vdc) (IC=-500 mAdc, VCE=-1.0 Vdc) Collector-Emitter Saturation Voltage (IC=-500 mAdc, IB=-50mAdc) Base-Emitter Saturation Voltage (IC=-500 mAdc, IB=-50mAdc) Base-Emitter Voltage ( I E=-100mA) hFE (1) hFE (2) VCE(sat) VBE(sat) VEBF
120 40 350
-0.6 -1.2
Vdc Vdc
-
-
-1.4
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (IC=-20 mAdc, VCE=-6 Vdc, f=30MHz) fT 150 MHz
CLASSIFICATION OF hFE Rank Range L 120-200 H 200-350
WEITRON
http://www.weitron.com.tw
S9012LT1
1000
IB=-300uA IB=-250uA IB=-200uA
-50
I C , CO LL ECTOR CURRENT (mA)
VCE = -1V
-30
IB=-150uA IB=-100uA
hFE, DC CURRENT GAIN
-40
100
-20
IB=-50uA
-10 0
10 -10
0
-10
-20
-30
-40
-50
-100
-1000
VCE , COLLECTOR-EMITTER VOLTAGE (VoLTS)
I C , CO LLECTOR CURRENT (mA)
Figure 1. St atic Characteristic
Figure 2. DC c urrent Gain
VBE(s at), VCE(s at) , SATURATION VOLTAGE (mA)
-1000 V BE(sat)
f T , CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
1000 VCE = - 6V
100
-100
VCE (sat)
10
IC=10I B -10 10 100 1000
1 1
10
100
1000
10000
I C , COLL ECTOR CURRENT (mA)
I C , COLLECTOR CURRENT
Fig ure 3. Base-Emitter Saturation Voltage Co llector-Emitter Saturation Vo ltage
Figure 4. Curre nt Gain Bandwidth Product
WEITRON
http://www.weitron.com.tw


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